View CMT06N60_4797736.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CMT06N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Front View
GATE
SOURCE
DRAIN
G
1
2
3
S
N-Channel MOSFET
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 1
CMT06N60
POWER FIELD EFFECT TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds (1) VDD = 50V, ID = 6A (2) Pulse Width and frequency is limited by TJ(max) and thermal response EAS JC JA TL 180 1.0 62.5 260 /W TJ, TSTG Symbol ID IDM VGS VGSM PD 125 45 -55 to 150 mJ Value 6.0 18 20 40 V V W Unit A
ORDERING INFORMATION
Part Number CMT06N60N220 CMT06N60N220FP Package TO-220 TO-220FP
TEST CIRCUIT
Test Circuit - Avalanche Capability
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 2
CMT06N60
POWER FIELD EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
CMT06N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * Forward Transconductance (VDS = 15 V, ID = 3.0A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 6.0 A, dIS/dt = 100A/s) VSD ton trr 0.83 ** 266 1.2 V ns ns LS 7.5 nH (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 6.0 A, VGS = 10 V, RG = 9.1) * (VDS = 300 V, ID = 6.0 A, VGS = 10 V)* RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD 3.4 1498 158 29 14 19 40 26 35.5 8.1 14.1 4.5 2100 220 60 30 40 80 55 50 1.2 mhos pF pF pF ns ns ns ns nC nC nC nH VGS(th) 2.0 4.0 V IGSSR 100 nA IGSSF IDSS 100 50 100 nA A Symbol V(BR)DSS Min 600 Typ Max Units V
* Pulse Test: Pulse Width 300s, Duty Cycle 2% ** Negligible, Dominated by circuit inductance
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 3
CMT06N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 4
CMT06N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-220
D A c1
F E
PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE
E1
A A1
L1
b b1 c c1 D
L
E E1 e e1 F L
b1 e1
e b
A1 c Side View
L1
Front View
TO-220FP
0 0.1
C
R
J
D
Q
H
R1 .5 0
R1 .5 0
B
I
8 3.1
A B
A
C D
E
E
P
K O
G H I J K M N O P Q
R 60 1.
G
b
R b b1 b2 e
b1 e Front View
b2 R
N M
Side View
Back View
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 5
CMT06N60
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the
HsinChu Headquarter
5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909
Sales & Marketing
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985
2006/10/11 Rev. 1.2
Champion Microelectronic Corporation
Page 6

▲Up To Search▲

Price & Availability of CMT06N60

	To Download CMT06N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .